The rapid growth of electric vehicles (EVs) has increased the demand for efficient, compact, and reliable power conversion systems. Among these, DC–DC converters play a crucial role in regulating voltage between the battery, motor drive, and auxiliary loads. This paper presents the design and analysis of a high-efficiency DC–DC converter using Silicon Carbide (SiC) semiconductor devices for EV applications. Compared to conventional silicon devices, SiC devices offer advantages such as higher switching frequency, lower conduction and switching losses, improved thermal performance, and higher power density. The proposed converter topology is optimized for high-frequency operation, enabling the use of smaller passive components like inductors and capacitors, thereby reducing system size and weight. Advanced control strategies ensure stable operation, fast dynamic response, and minimal voltage ripple under varying load conditions. SiC MOSFETs enhance performance under high voltage and temperature, making them suitable for harsh automotive environments. Simulation results demonstrate that the SiC-based converter achieves higher efficiency and reduced power losses compared to silicon-based designs, particularly at high switching frequencies. This leads to improved battery utilization and extended vehicle range. Overall, SiC technology significantly enhances converter performance, reliability, and efficiency, making it a key enabler for next-generation sustainable EV systems.

Keywords: Electric Vehicles (EVs); DC–DC Converter; Silicon Carbide (SiC); SiC MOSFET.